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AO3420 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3420 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch. Standard Product AO3420 is Pb-free (meets ROHS & Sony 259 specifications). AO3420L is a Green Product ordering option. AO3420 and AO3420L are electrically identical.
Features
VDS (V) = 20V ID = 6 A (VGS = 10V) RDS(ON) < 24m (VGS = 10V) RDS(ON) < 27m (VGS = 4.5V) RDS(ON) < 42m (VGS = 2.5V) RDS(ON) < 55m (VGS = 1.8V)
TO-236 (SOT-23) Top View G D S G
D
S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum 20 12 6 5 25 1.4 0.9 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 70 100 63
Max 90 125 80
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO3420
Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250A, VGS=0V VDS=16V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=250uA VGS=4.5V, VDS=5V VGS=10V, ID=6A TJ=125C RDS(ON) VGS=4.5V, ID=5A VGS=2.5V, ID=4A VGS=1.8V, ID=2A Forward Transconductance VDS=5V, ID=3.8A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Static Drain-Source On-Resistance 0.5 25 19 29 22 35 45 24 0.75 1 2 630 164 137 1.5 8.8 1 3.7 5.5 14 29 10.2 15.2 6.3 24 35 27 42 55 m 0.7 Min 20 1 5 100 1 Typ Max Units V A nA V A
gFS VSD IS
S V A pF pF pF nC nC nC ns ns ns ns ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=10V, ID=6A
VGS=5V, VDS=10V, RL=1.7, RGEN=6
IF=6A, dI/dt=100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/s
2
A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev0 : July 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO3420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30 10V 20 3V 4V 20 ID(A) ID(A) 10 125C 125C 25C 25C 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS(Volts) Figure 2: Transfer Characteristics VGS =2V 15 VGS=5V VDS=5V
10
VGS =1.5V
5
0 VDS(Volts) Figure 1: On-Regions Characteristics 50 VGS=1.8V Normalize ON-Resistance 40 RDS(ON) (m) VGS=2.5V 30 VGS=4.5V 20 VGS=10V 10 0 2 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
1.6
270
VGS=2.5V ID=3.5A ID=4A VGS=4.5V ID=5A
1.4
1.7
VGS ID=3.8A 3.6 =10V ID=6A
1.2
1.0
VGS=1.8V ID=2A ID=1A
0.8 0 25 50 75 100 125
13
150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
80 70 60 RDS(ON)(m) 50 40 30 20 10 0 2 4 25C
ID=3.8A
1E+01 ID=6A 1E+00 1E-01 IS(A) 1E-02 1E-03 1E-04 1E-05 6 8 0.0 0.2 0.4 0.6 0.8 1.0 VSD(Volts) Figure 6: Body-Diode Characteristics 25C 125C
125C
125C
25C
VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO3420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 VGS(Volts) 3 2 1 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=10V ID=6A VDS=15V ID=3.8A Capacitance (pF) 1400 1200 1000 800 600 400 200 0 0 5 10 15 20 VDS(Volts) Figure 8: Capacitance Characteristics Crss Coss Coss Crss Ciss
270
100 TJ(Max)=150C, TA=25C 20 TJ(Max)=150C TA=25C
ID (Amps)
Power (W)
RDS(ON) 10 limited
15 10s 100s
1.7 3.6
10
1 DC
1ms 10ms 100m 1s 0.1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 1 100
5
0.1
0 0.001
13
0.01
0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse T
0.01 0.00001
0.0001
0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
0.001
0.01
100
1000
Alpha & Omega Semiconductor, Ltd.

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